教育背景
2005.09－2009.06 华中科技大学，电子科学与技术专业，博士学位
2002.09－2005.06 华中科技大学，电子科学与技术专业，硕士学位
1998.09－2002.06 华中科技大学，电子科学与技术专业，学士学位
工作履历
2013.07－至今 电子科技大学，副教授
2009.09－2013.06 电子科技大学，讲师
研究方向
非易失性存储器及嵌入式应用
包括铁电存储器、阻变存储器、Flash，以及基于非易失性存储单元作为开关单元的现场可编程门阵列FPGA。
在国内外权威期刊以及国际会议上发表学术论文20余篇，其中以第一作者在Thin Solid Films, Journal of Materials Science, Integrated Ferroelectrics, Chinese Physics Letters, 物理学报等期刊发表论文12篇，均为SCI收录。申请中国发明专利3项，已授权1项。
代表性论文
[1]J.J. Li, P. Li, G.J. Zhang, J. Yu, Y.Y. Wu and X.Y. Wen. The thickness effect of Bi3.25La0.75Ti3O12 buffer layer in PbZr0.58Ti0.42O3/Bi3.25La0.75Ti3O12 (PZT/BLT) multilayered ferroelectric thin films. Thin Solid Films. 519: 6021-6025, 2011
[2]J.J. Li, P. Li, G.J. Zhang, J. Yu, J. Li, W.M. Yang. Effect of annealing pressure on structure and properties of ferroelectric Bi3.25La0.75Ti3O12 thin films prepared by sol-gel method. Journal of Materials Science: Materials in Electronics, 22(3): 299-303, 2011
[3]J.J. Li, W.M. Yang and J. Yu. Characterization and First Principle Studies on Pb-substituted (Ba,Sr)TiO3 Ceramics. Integrated Ferroelectrics, 113: 75-82, 2009
[4]J.J. Li, J. Yu, J. Li, W.M. Yang and Y.B. Wang. Co-effect of Annealing Temperature and Ambient on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Films. Integrated Ferroelectrics, 110: 43-54, 2009
[5]J.J. Li, J. Li, G. Peng, Y.B. Wang and J. Yu. The Effect of A-site La and Nd Substitution on The Residual Stress of Bi4Ti3O12 Thin Films Fabricated by Sol-Gel Method. Integrated Ferroelectrics, 110: 80-86, 2009
[6]X.D. Xie, W. Li, J.J. Li, G. Wang. High performance floating-gate technology compatible antifuse. Electronics Letters, 49 (12): 763-764, 2013
